| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems that a trench gate vertical channel type power MOSFET or the like has a merit of low ON resistance, but dispersion of ON resistance values or the like due to refinement comes into question, limitation of refinement also comes into question due to a structural problem, and these problems may cause not only problems only for a single power MOSFET or the like but also important problems for an integrated circuit device configured by integrating a CMOS, etc. and power active devices on a single chip like an IGBT or the like applying the similar structure. <P>SOLUTION: In a semiconductor device including a trench gate vertical channel type power active element such as a trench gate vertical channel type power MOSFET, the width of an interlayer insulating film is set to almost the same as the width of a trench and a part of a source region is configured by a polysilicon member. <P>COPYRIGHT: (C)2012,JPO&INPIT |
