FIELD-EFFECT TRANSISTOR, FIELD-EFFECT TRANSISTOR MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

摘要

According to the present disclosure, it is possible to further miniaturize the gate electrode of the field-effect transistor. The field-effect transistor includes a substrate; a semiconductor layer configured to be formed on the substrate and have a fin region formed thereon with a source region and a drain region formed at both ends of the fin region; and a gate electrode configured to have a convex portion partially in contact with at least two faces of the fin region.