发明名称 |
FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME |
摘要 |
Current drive efficiency is deteriorated in the conventional FET. The FET 20 includes an electrode film 24a provided over the semiconductor substrate 10 and a stressor film 24b that is provided on the electrode film 24a and constitutes a gate electrode 24 together with the electrode film 24a. Each of the electrode film 24a and the stressor film 24b is composed of a metal, a metallic nitride or a metallic silicide. The stressor film 24b is capable of exhibiting a compressive stress over the semiconductor substrate 10. |
申请公布号 |
US2012228680(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213478394 |
申请日期 |
2012.05.23 |
申请人 |
MATSUKI TAKEO;RENESAS ELECTRONICS CORPORATION |
发明人 |
MATSUKI TAKEO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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