发明名称 SPUTTERING TARGET AND THIN FILM TRANSISTOR EQUIPPED WITH SAME
摘要 A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO): 0.28≦̸Zn/(In+Zn+Ga)≦̸0.38 0.18≦̸Ga/(In+Zn+Ga)≦̸0.28.
申请公布号 US2012228608(A1) 申请公布日期 2012.09.13
申请号 US201013510934 申请日期 2010.11.18
申请人 YANO KOKI;ITOSE MASAYUKI 发明人 YANO KOKI;ITOSE MASAYUKI
分类号 C23C14/34;C09D1/00;C23C14/08;H01L29/786 主分类号 C23C14/34
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