METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

In this method for manufacturing a semiconductor device: separated semiconductor chips are laminated on a semiconductor substrate on which are formed a plurality of semiconductor chips having semiconductor integrated circuits on the main surface side thereof; semiconductor chips on different layers are connected in a manner enabling signal transmission; and the semiconductor chip sections subsequently laminated are separated. This method for manufacturing a semiconductor device comprises: a first step in which an insulation layer is formed on the main surface of the semiconductor substrate; a second step in which the separated semiconductor chips having semiconductor integrated circuits on the main surface side thereof are oriented so that the surface on the reverse side from the main surface faces the insulation layer, and are laminated upon the semiconductor chips formed on the semiconductor substrate with the insulation layer therebetween; and a third step in which connected portions that enable signal transmission between the semiconductor chips on different layers are formed.