| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit diffusion of an electrode material to achieve improved characteristics. <P>SOLUTION: A semiconductor device includes an electrode material diffusion inhibition layer 6 provided at any of locations between a gate electrode 3 and a gate insulation film 2, between Al-contained ohmic electrodes 4, 5 and Au wiring 9, below the gate electrode 3 and above the Al-contained ohmic electrodes 4,5, and having a structure in which a first TaN layer 6A, a Ta layer 6B and a second TaN layer 6C are laminated in this order. <P>COPYRIGHT: (C)2012,JPO&INPIT |
