| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-reliable nitride semiconductor device which easily and surely obtains a desired concentration distribution of a two-dimensional hole gas without ion implantation, and achieves gentle relaxation of an electric field concentration. <P>SOLUTION: The compound semiconductor device which includes an n-GaN layer 2 formed on an N surface of an n-GaN substrate 1, a JTE structure 10 formed of AlGaN formed on the n-GaN layer, and an anode electrode 7 formed on the n-GaN layer 2 generates a two-dimensional hole gas on the interface between the n-GaN layer 2 and the JTE structure 10 so that a hole concentration becomes lower as is separated from the anode electrode 7. <P>COPYRIGHT: (C)2012,JPO&INPIT |
