发明名称 THIN FILM DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus consistently generating plasma above a substrate. <P>SOLUTION: The thin film deposition apparatus for depositing a thin film on a substrate includes a film deposition vessel having a film deposition space for depositing the thin film on the substrate in a vacuum state, a gas introducing part for introducing gas to be used for thin film deposition into the film deposition space of the film deposition vessel, and a plasma electrode part for generating plasma by using the gas in the film deposition space. The plasma electrode part includes a rectangular plasma generating electrode plate in which the current flows from one end face to the other end face, and a principal surface is directed to the film deposition space, and a pair of magnets which are juxtaposed along a side surface of the electrode plate so as to hold the electrode plate from both side surfaces and of which the ends directed to the film deposition space have polarities different from each other. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012177173(A) 申请公布日期 2012.09.13
申请号 JP20110041224 申请日期 2011.02.28
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 TAKIZAWA KAZUKI
分类号 C23C16/507;H01L21/31;H05H1/46 主分类号 C23C16/507
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