| 发明名称 |
METHOD FOR FORMING A SILICON LAYER ON ANY SUBSTRATE USING LIGHT IRRADIATION |
| 摘要 |
A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate.
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| 申请公布号 |
US2012231607(A1) |
申请公布日期 |
2012.09.13 |
| 申请号 |
US201113306455 |
申请日期 |
2011.11.29 |
| 申请人 |
LEE TAEYOON;KOO JA HOON;LEE SANG WOOK;LEE KA YOUNG;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
LEE TAEYOON;KOO JA HOON;LEE SANG WOOK;LEE KA YOUNG |
| 分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
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