发明名称 |
SUBSTRATE PROCESSING APPARATUS AND FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE |
摘要 |
A substrate processing apparatus includes a processing vessel evacuated by an evacuation system and including therein a stage for holding thereon a substrate to be processed, the processing vessel defining therein a processing space, a processing gas supply path that introduces an etching gas into the processing vessel, a plasma source that forms plasma in the processing space, and a high-frequency source connected to the stage. The processing vessel includes therein a shielding plate dividing the processing space into a first processing space part including a surface of the substrate to be processed and a second processing space part corresponding to a remaining part of the processing space, wherein the shielding plate is formed with an opening having a size larger than a size of the substrate to be processed.
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申请公布号 |
US2012231553(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213479496 |
申请日期 |
2012.05.24 |
申请人 |
OKITA YOICHI;IBI KOJI;SUZUKI MINORU;TACHINO YUUICHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
OKITA YOICHI;IBI KOJI;SUZUKI MINORU;TACHINO YUUICHI |
分类号 |
H01L21/311;H01J37/32;H01L21/00;H01L21/3065;H01L21/3213 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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