CELL-STATE DETERMINATION IN PHASE-CHANGE MEMORY

摘要

Methods and apparatus are provided for determining the state of a phase-change memory cell (10). The cell (10) is biased with a time- varying read voltage (Vread) and a measurement (TM) is then made. The measurement (TM) is dependent on a predetermined condition being satisfied. This condition depends on cell current during application of the read voltage (Vread). The measurement (TM) is then used to determine the state of the cell (10).