发明名称 |
Manufacturing Method for High Voltage Transistor |
摘要 |
A manufacturing method for a high voltage transistor includes the following steps. A substrate is provided. A P-type epitaxial (P-epi) layer is provided above the substrate. An N-well is formed in the P-epi layer. A P-well is formed in the P-epi layer. Field oxide (FOX) layers are formed above the P-epi layer. A gate oxide (GOX) layer is formed between the FOX layers. P-type implants are doped into the P-well or N-type implants are doped into the N-well to adjust an electrical function of the high voltage transistor. |
申请公布号 |
US2012231597(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201113041752 |
申请日期 |
2011.03.07 |
申请人 |
CHIN YU-HSIEN;HSU CHIH-CHIA;HUANG YIN-FU;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHIN YU-HSIEN;HSU CHIH-CHIA;HUANG YIN-FU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|