发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.
申请公布号 US2012228263(A1) 申请公布日期 2012.09.13
申请号 US201213424952 申请日期 2012.03.20
申请人 UI AKIO;HAYASHI HISATAKA;KIKUTANI KEISUKE 发明人 UI AKIO;HAYASHI HISATAKA;KIKUTANI KEISUKE
分类号 B44C1/22;B05C9/00 主分类号 B44C1/22
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