| 摘要 |
Methods are described for reading a chemically-sensitive field-effect transistor (chemFET) with an improved signal-to-noise ratio. In one embodiment, a method is described for reading a chemFET having a first terminal and a second terminal, and a floating gate coupled to a passivation layer. The method includes biasing the first terminal of the chemFET to a first bias voltage during a read interval. The second terminal of the chemFET is coupled to a data line during the read interval. A current is induced through the chemFET via the data line. An output signal proportional to an integral of a voltage or current on the data line is generated in response to the induced current through the chemFET during the read interval.
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