发明名称 |
HIGH-FREQUENCY POWER AMPLIFIER |
摘要 |
There is a need to provide a high-frequency power amplifier capable of reducing a talk current and reducing a phase deviation in output. The high-frequency power amplifier includes differently sized first through fifth power amplification transistors and impedance matching circuits for example. The high-frequency power amplifier changes a signal path to be used in accordance with a power specification signal. The high-frequency power amplifier uses a signal path from the first transistor to the second transistor in high power mode. The high-frequency power amplifier uses a signal path from the first transistor to the third transistor in medium power mode. The high-frequency power amplifier uses a signal path from the fourth transistor to the fifth transistor in low power mode. The high-frequency power amplifier is configured so that each of the signal paths includes the same number of stages of power amplification transistors and impedance matching circuits. |
申请公布号 |
US2012229217(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213398893 |
申请日期 |
2012.02.17 |
申请人 |
KAWANO TAKAYUKI;SEKI KENTA;SAKURAI SATOSHI;RENESAS ELECTRONICS CORPORATION |
发明人 |
KAWANO TAKAYUKI;SEKI KENTA;SAKURAI SATOSHI |
分类号 |
H03F3/68 |
主分类号 |
H03F3/68 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|