发明名称 HIGH-FREQUENCY POWER AMPLIFIER
摘要 There is a need to provide a high-frequency power amplifier capable of reducing a talk current and reducing a phase deviation in output. The high-frequency power amplifier includes differently sized first through fifth power amplification transistors and impedance matching circuits for example. The high-frequency power amplifier changes a signal path to be used in accordance with a power specification signal. The high-frequency power amplifier uses a signal path from the first transistor to the second transistor in high power mode. The high-frequency power amplifier uses a signal path from the first transistor to the third transistor in medium power mode. The high-frequency power amplifier uses a signal path from the fourth transistor to the fifth transistor in low power mode. The high-frequency power amplifier is configured so that each of the signal paths includes the same number of stages of power amplification transistors and impedance matching circuits.
申请公布号 US2012229217(A1) 申请公布日期 2012.09.13
申请号 US201213398893 申请日期 2012.02.17
申请人 KAWANO TAKAYUKI;SEKI KENTA;SAKURAI SATOSHI;RENESAS ELECTRONICS CORPORATION 发明人 KAWANO TAKAYUKI;SEKI KENTA;SAKURAI SATOSHI
分类号 H03F3/68 主分类号 H03F3/68
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