SPUTTERING TARGET, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

The purpose of the present invention is to provide a sputtering target, with which a film having excellent characteristics can be obtained. A sputtering target (100) is configured of a plurality of target materials (10), a backing plate (20), a bonding material (30), and a protection material (50). The target materials (10) and the backing plate (20) are bonded to each other with the bonding material (30) therebetween. On a backing plate (20) surface that faces joints (15) between adjacent target materials (10), grooves (40) are formed. Each of the grooves (40) is provided with a protection material (50), which is composed of a material same as that of the target material (10). The width (W2) of the protection material (50) is wider than the width (W1) of the joints (15), and is narrower than the width (W3) of the grooves (40). The thickness (T4) of the protection material (50) is larger than the depth (D1) of the grooves (40).