发明名称 DETECTING METHOD AND MODIFYING METHOD OF HALF PIN HOLE DEFECT FOR SEMICONDUCTOR MANUFACTURING MASK
摘要 <p>PURPOSE: A detecting method for a defective location of a half pin hole on a mask for semiconductor manufacturing and a correcting method of defects are provided to easily detect a defective location of a half-pin hole by forming either a light shielding pattern and a transparent pattern near a defective portion of the half-pin hole. CONSTITUTION: A coordinate of a defective portion of a half pin hole is found. A reference point(P1) is formed in an adjacent portion of the coordinate. A positional difference between the half pin hole and the reference point is detected. A location of the defective portion of the half pin hole defect is detected using the detected positional difference. Light shielding patterns(300,400) are formed on the defective portion of the half pin hole.</p>
申请公布号 KR20120101208(A) 申请公布日期 2012.09.13
申请号 KR20110013465 申请日期 2011.02.15
申请人 SK HYNIX INC. 发明人 SHIN, JAE CHEON
分类号 H01L21/027;G03F1/72;H01L21/66 主分类号 H01L21/027
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