发明名称 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a negative resist composition for improving line edge roughness (LER), allowing formation of a resist profile with little undercut degree specific to a negative resist composition, and giving high resolution. <P>SOLUTION: A chemically amplified negative resist composition is provided, having such a mechanism that crosslinks are formed among resist polymers by a crosslinking agent and/or a repeating unit having a crosslinking functional group in a resist polymer while an acid generating by irradiation with high energy beams acts as a catalyst and that the composition is changed into insoluble with an alkaline developing solution. The resist polymer contains repeating units of (1) a (meth)acrylic acid ester unit having an acid generating group in a side chain, (2) a (meth)acrylic acid ester unit having a condensed aromatic ring in a side chain, (3) acenaphthylene unit, and (4) an indene unit, in which the repeating unit (1) is included by 0.5 to 10 mol% and other repeating units in total is included by 50 to 99.5 mol%. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012177834(A) 申请公布日期 2012.09.13
申请号 JP20110041517 申请日期 2011.02.28
申请人 SHIN ETSU CHEM CO LTD 发明人 MASUNAGA KEIICHI;DOMON HIROMASA;WATANABE SATOSHI
分类号 G03F7/038;C08F212/02;C08F220/30;C08F220/34;C08F220/38;C08F232/08;G03F7/004;H01L21/027 主分类号 G03F7/038
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