Methods of Fabricating Silicon Carbide Devices Having Smooth Channels and Related Devices

摘要

Methods of forming silicon carbide power devices are provided. An n−silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n−silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n−region is provided on the channel region and a portion of the n−region is removed from the channel region so that a portion of the n−region remains on the channel region to provide a reduction in a surface roughness of the channel region.