发明名称 |
SEMICONDUCTOR INTERCONNECT STRUCTURE WITH MULTI-LAYERED SEED LAYER PROVIDING ENHANCED RELIABILITY AND MINIMIZING ELECTROMIGRATION |
摘要 |
An interconnect structure and method for forming a multi-layered seed layer for semiconductor interconnections are disclosed. Specifically, the method and structure involves utilizing sequential catalytic chemical vapor deposition, which is followed by annealing, to form the multi-layered seed layer of an interconnect structure. The multi-layered seed layer will improve electromigration resistance, decrease void formation, and enhance reliability of ultra-large-scale integration (ULSI) chips.
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申请公布号 |
US2012228771(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201113044660 |
申请日期 |
2011.03.10 |
申请人 |
EDELSTEIN DANIEL C.;NOGAMI TAKESHI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDELSTEIN DANIEL C.;NOGAMI TAKESHI |
分类号 |
H01L23/48;C23C16/44;C23C16/455;C23C16/458;C23C16/46;C23C16/52;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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