COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSOR PIXEL READOUT CIRCUIT STRUCTURE AND PIXEL STRUCTURE

摘要

A Complementary Metal-Oxide-Semiconductor (CMOS) image sensor pixel readout circuit structure and a pixel structure are provided. The readout circuit structure includes an adjustable gain amplifier comprising an operational amplifier, a first capacitor, a switch and a second capacitor, wherein one input transistor of the operational amplifier is the readout transistor of a CMOS image sensor pixel unit. The sensitivity, the signal to noise ratio and the dynamic range can be improved, the image quality will not be affected during image transmission, and the adjustable gain can be achieved.