| 摘要 |
<P>PROBLEM TO BE SOLVED: To expand the range of choices for a material of a ground of a channel and inhibit increase in on-resistance of a vertical field effect transistor in the vertical field effect transistor, a manufacturing method of the same and an electronic apparatus. <P>SOLUTION: A vertical field effect transistor comprises: a substrate 1; a source electrode 2 formed on the substrate 1; a first insulation film 3 formed on the substrate 1 and having an opening 12 overlapping the source electrode 2; a gate electrode 6 formed on the first insulation film 3 beside the opening 12; a gate insulation film 16 formed on a lateral face of the opening 12; a second insulation film 8 formed on the first insulation film 3 and provided with a recess 8a leading to the opening 12; a channel 17 formed on the inner sides of the opening 12 and the recess 8a and on the second insulation film 8 and made from an oxide semiconductor; and a drain electrode 19 formed on the channel 17 beside the recess 8a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
