| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device and a method for measuring pattern height for non-destructively and promptly measuring height of a pattern. <P>SOLUTION: An observation area of the surface of a sample is scanned by irradiating an electronic beam, an image (SEM image) is acquired based on a detection signal of a secondary electron by a detector 99a arranged at a diagonal upper part of the observation area, and length L of a shadow of a pattern 82 which appears on the image is detected. Then, height H of the pattern 82 is calculated by H=L×tanθ based on a preliminarily calculated angle θ on appearance to the surface of the sample of the detector 99a and the detected length L of the shadow. The length L of the shadow of the pattern 82 is calculated by extracting intensity distribution of the secondary electron on a line X-X perpendicular to, for example, edges 82a, 82b of the pattern 82, and as distance between two points where a recess of the intensity distribution of the secondary electron crosses a predetermined threshold I. <P>COPYRIGHT: (C)2012,JPO&INPIT |
