| 摘要 |
A method for manufacturing a silicon epitaxial wafer, including vapor-phase growing a silicon single crystal thin film on a silicon single crystal substrate in a hydrogen atmosphere while supplying a source gas; and cooling a silicon epitaxial wafer having the formed silicon single crystal thin film by calculating a temperature at which a standard value or a process average value of concentration of an evaluation target impurity present in the silicon single crystal thin film coincides with solubility limit concentration of the evaluation target impurity and setting a cooling rate of the silicon epitaxial wafer after the film formation to be less than 20° C./sec in a temperature range of at least plus or minus 50° C. from the calculated temperature.
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