| 摘要 |
<P>PROBLEM TO BE SOLVED: To smooth an inner wall side face of a hole having a recessed shape by making a part of a sidewall protecting film left on the inner wall side face of the hole, and to fill the inside of the hole with material while keeping a high filling property without generating any void even when filling the inside of the hole with material in a subsequent step. <P>SOLUTION: A manufacturing method of a semiconductor apparatus includes the steps of providing a mask on a rear surface of a semiconductor substrate, forming a hole which passes through the semiconductor substrate and has a recessed inner wall side face and of which the inner wall side face is covered with a sidewall protecting film, and removing the mask so as to make a part of the sidewall protecting film left. <P>COPYRIGHT: (C)2012,JPO&INPIT |
