| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce difference between DC and RF characteristics caused by electron trapping. <P>SOLUTION: A transistor 10 comprising an active region having a channel layer, with source and drain electrodes 20, 22 formed in contact with the active region and a gate 24 formed between the source and drain electrodes and in contact with the active region. A spacer layer 28 is on at least part of the surface of the plurality of active region between the gate and drain electrodes and between the gate and source electrodes. A field plate 32 is on the spacer layer and extends on the spacer over the active region toward the drain electrode. The field plate also extends on the spacer layer over the active region toward the source electrode. At least one conductive path 34, 36 electrically connects the field plate to the source electrode or the gate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
