| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field effect transistor (FET) in which reliability is improved more by making it difficult to deteriorate a device even in the case where a high voltage is applied between a gate and a drain in the FET including a group-III nitride semiconductor as a main material. <P>SOLUTION: In a laminated structure where a lattice-mitigated buffer layer 11, channel layer 12, and electron supply layer 13 are formed in the order of descriptions, respectively, by using a group-III nitride semiconductor on a substrate 10 under a growth mode in parallel with a [0001] or [000-1] crystal axis, an FET is provided in which, between the buffer layer 11 and the electron supply layer 13, the layer located at a group-III atom plane side of the channel layer 12 has a greater a-axis length than the layer located at a group-V atom plane side of the channel layer 12, and the electron supply layer 13 has a larger band gap than the channel layer 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
