PROCESS FOR PRODUCING SILICON WAFER

摘要

The present invention is a process for producing a silicon wafer, characterized by including, after deposition of an oxide film on one surface of a raw silicon wafer by chemical vapor deposition, a step in which both surfaces of the raw silicon wafer are polished using, for the oxide-film surface side, a polishing cloth which is either a polishing suede cloth obtained by applying a urethane resin and then subjecting the applied urethane resin to wet-process solidification to foam the resin or a polishing velour cloth obtained by impregnating nonwoven fabric with a urethane resin and which has an Asker-C rubber hardness of 50º or higher but less than 90º, and using, for the side which has no deposited oxide film, a polishing cloth which is either a polishing cloth constituted of foam of a urethane alone or a polishing velour cloth obtained by impregnating nonwoven fabric with a urethane resin and which has an Asker-C rubber hardness of 90º or higher. Thus, by the process for silicon wafer production, a silicon wafer having a high degree of flatness can be produced while inhibiting the oxide film from suffering scratches or being reduced in thickness by polishing and while thereby maintaining the quality of the oxide film as a protective film for preventing dopant volatilization.