| 发明名称 |
Methods of forming phase change material layers and methods of manufacturing phase change memory devices |
| 摘要 |
A phase change material layer includes a Ge-M-Te (GMT) ternary phase change material, where Ge is germanium, M is a heavy metal, and Te is tellurium. The GMT ternary phase change material may also include a dopant. |
| 申请公布号 |
US2012231603(A1) |
申请公布日期 |
2012.09.13 |
| 申请号 |
US201213400971 |
申请日期 |
2012.02.21 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
IM DONG-HYUN;OH GYU-HWAN;CHO SUNG-LAE;KIM IK-SOO;PARK SEUNG-HO |
| 分类号 |
H01L45/00;H01L21/20 |
主分类号 |
H01L45/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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