Reducing transistor junction capacitance by recessing drain and source regions

摘要

A semiconductor device, comprising a first transistor having recessed drain and source regions, said drain and source regions are provided in recessed portions of a semiconductor layer and extend to a buried insulating layer; a strained semiconductor alloy provided partially in said drain and source regions, said strained semiconductor alloy inducing a strain in a channel region of said first transistor, wherein a top surface of said strained semiconductor alloy opposite the buried insulating layer is recessed below an interface between a gate insulation layer and the channel region of the first transistor; and an interlayer dielectric material formed above the top surface and in a recessed portion of said strained semiconductor alloy.