| 摘要 |
According to one disclosed embodiment, a power semiconductor package includes an insulated-gate bipolar transistor (IGBT) residing on a package substrate (470, 570), where the IGBT (420,520) includes a plurality of solderable front metal (SFM) coated emitter segments (492,592) situated atop the IGBT (420,520) and connected to an emitter of the IGBT. The power semiconductor package also includes a conductive clip (480,580) coupling the plurality of SFM coated emitter segments (492, 592) to an emitter pad on the package substrate (470, 570). Additionally, the power semiconductor package includes a gate pad on the package substrate coupled to a gate of the IGBT, a collector pad on the package substrate situated under the IGBT and coupled to a collector of the IGBT, and an emitter terminal, a collector terminal and a gate terminal of the package substrate that are routed to the emitter pad, collector pad, and gate pad, respectively. The conductive clip (480, 580) further has through holes (484) in the conductive clip body (490) that are configured to allow reflow degassing to escape from the surface area of the coupling between emitter segements (492) and the conductiv clip body (490) thereby siginificantly reducing the risk of physical irregularities during the reflow process. |
