| 摘要 |
A device is disclosed for controlling conduction across a semiconductor body with a P type channel layer (46) between active semiconductor regions of the device and the controlling gate contact (45). The device, often a MOSFET or an IGBT, includes at least one source (38), well (33, 34), and drift region (54). The P type channel layer may be divided into sections, or divided regions (56, 57, 58, 60), that have been doped to exhibit different conductivity. By dividing the channel layer into regions of different conductivity, the channel layer allows better control over the threshold voltage that regulates current through the device. Accordingly, one of the divided regions in the channel layer is a threshold voltage regulating region (58). While the other three regions (56, 57, 60) exhibit N-type conductivity the threshold-voltage regulating region maintains its original P type conductivity and is available in the transistor for a gate voltage to invert a conductive zone therein. The conductive zone becomes the voltage regulated conductive channel within the device. |
