发明名称 LIGHT EMITTING DIODE CHIP
摘要 PURPOSE: A light emitting diode chip is provided to increase light emitting power by thickly forming light emitting diode assembly. CONSTITUTION: A plurality of protrusions(110) is arranged on the side of a substrate(100) at constant interval. A light emitting diode(200) is included at one surface of the substrate. The light emitting diode comprises a semiconductor structure layer(210), a passivation layer(220), and bumps(242,244). The semiconductor structure layer comprises a first type semiconductor layer(214), an active layer(216), and a second type semiconductor layer(218). An embossed portion(120) is formed on the rear surface of the substrate. The thickness of the substrate is 200 to 400micrometers.
申请公布号 KR20120100193(A) 申请公布日期 2012.09.12
申请号 KR20110018923 申请日期 2011.03.03
申请人 SEOUL OPTO DEVICE CO., LTD. 发明人 LEE, KYU HO;SUH, DAE WOONG;SEO, WON CHEOL;KIM, CHANG HOON;LEE, SUNG HYUN;IN, CHI HYUN
分类号 H01L33/20;H01L33/22 主分类号 H01L33/20
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