发明名称 |
LIGHT EMITTING DIODE CHIP |
摘要 |
PURPOSE: A light emitting diode chip is provided to increase light emitting power by thickly forming light emitting diode assembly. CONSTITUTION: A plurality of protrusions(110) is arranged on the side of a substrate(100) at constant interval. A light emitting diode(200) is included at one surface of the substrate. The light emitting diode comprises a semiconductor structure layer(210), a passivation layer(220), and bumps(242,244). The semiconductor structure layer comprises a first type semiconductor layer(214), an active layer(216), and a second type semiconductor layer(218). An embossed portion(120) is formed on the rear surface of the substrate. The thickness of the substrate is 200 to 400micrometers.
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申请公布号 |
KR20120100193(A) |
申请公布日期 |
2012.09.12 |
申请号 |
KR20110018923 |
申请日期 |
2011.03.03 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
LEE, KYU HO;SUH, DAE WOONG;SEO, WON CHEOL;KIM, CHANG HOON;LEE, SUNG HYUN;IN, CHI HYUN |
分类号 |
H01L33/20;H01L33/22 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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