| 摘要 |
PURPOSE: A plasma processing apparatus is provided to perform a plurality of plasma etching process in a single process chamber by controlling plasma more precisely. CONSTITUTION: A process chamber(11) forms a process space inside. A bottom electrode includes a placement table(12) for putting on a processed substrate. An upper electrode is arranged to face the bottom electrode in the process chamber. A high frequency power source applies high frequency power to the bottom electrode. A process gas supply device supplies process gas which is turned to be plasma to the process space. A first ground member(61) forms a ground potential in the process chamber. A second ground member(62) faces the first ground member in an exhaust space of the process chamber. A ground bar(66) is carried to the top and bottom between the first and second ground members. |
