METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING A BOW RESISTANT LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device by using a bowing preventing film is provided to control bowing when forming an opening having a high aspect ratio by forming a material film with an intermediate material film and a top material film and an etching ratio lower than the etching ratio of a bottom material film. CONSTITUTION: A bottom material film(210), an intermediate material film(230), and a top material film(250) are successively formed on a substrate(100). A top opening exposing the upper surface of the bottom material film is formed by etching the intermediate material film and the top material film. A bottom opening(300b) is formed by etching the bottom material film exposed by the top opening. A bit line(113) crossing a word line(105) is formed within the intermediate material film.