METHOD OF MARKING SIC SEMICONDUCTOR WAFER AND SIC SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for marking a SIC semiconductor wafer and the SIC semiconductor wafer are provided to improve the visibility of a pattern by successively forming patterns while transferring a laser head. CONSTITUTION: A SiC(Silicon Carbide) semiconductor wafer(100) is prepared. Laser is irradiated from the laser head to the SiC semiconductor wafer. A predetermined pattern consisting of a laser irradiation mark(1) is imprinted on a surface of the SiC semiconductor wafer while moving the laser head with a respect to the SiC semiconductor wafer. The predetermined pattern is a group of dots(10) which are not overlapped.