发明名称 |
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR |
摘要 |
<p>A semiconductor (e.g., complementary metal oxide semiconductor (CMOS)) structure formed on a (110) substrate that has improved performance, in terms of mobility enhancement is provided. In accordance with the present invention, the inventive structure includes at least one of a single tensile stressed liner, a compressively stressed shallow trench isolation (STI) region, or a tensile stressed embedded well, which is used in conjunction with the (110) substrate to improve carrier mobility of both nFETs and pFETs. The present invention also relates to a method of providing such structures.</p> |
申请公布号 |
EP1974377(B1) |
申请公布日期 |
2012.09.12 |
申请号 |
EP20060841454 |
申请日期 |
2006.12.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
OUYANG, QIQING;FISCHETTI, MASSIMO |
分类号 |
H01L29/78;H01L29/04;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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