<p>A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.</p>
申请公布号
EP2497113(A1)
申请公布日期
2012.09.12
申请号
EP20100779599
申请日期
2010.11.01
申请人
ANALOG DEVICES, INC.
发明人
LANE, WILLIAM, ALLAN;BAIN, ANDREW, DAVID;BOWERS, DEREK, FREDERICK;DALY, PAUL, MALACHY;DEIGNAN, ANNE, MARIA;DUNBAR, MICHAEL, THOMAS;MCGUINNESS, PATRICK, MARTIN;STENSON, BERNARD PATRICK
