NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to increase the degree of integration by laminating a plurality of memory cells along a channel projected from a substrate to a vertical direction. CONSTITUTION: A channel connection layer(12) is formed on a substrate(10) by selectively etching a material layer. An element isolation film(13) surrounding the channel connection layer is formed. Interlayer dielectric layers(15,17) and gate electrode layers(16,18) are alternately formed on the channel connection layer and the element isolation film. A pair of channels passes through a lamination structure and is connected to the channel connection layer. A memory film(19) is formed between the channel and the lamination structure.