| 摘要 |
PURPOSE: A semiconductor device is provided to easily set a voltage of a gate of a control transistor, thereby easily controlling resonant frequency. CONSTITUTION: A first terminal of a capacitive element(102) is connected to the first terminal of a coil. A second terminal of the capacitive element is connected to the second terminal of the coil. A first terminal of a passive element(103) is connected to the first terminal of the coil. A first terminal of a first transistor(104) is connected to a second terminal of the passive element. A second terminal of the first transistor is connected to the second terminal of the coil. A first terminal of a second transistor is connected to a gate of the first transistor. The second transistor composes a semiconductor layer including a channel. |
