发明名称 Nonvolatile semiconductor storage device
摘要 According to one embodiment, a nonvolatile semiconductor storage device having a plurality of operation modes, includes: a plurality of first lines; a plurality of second lines; a plurality of memory cells; a first selection unit that charges the first line to a first selection voltage; and a second selection unit that charges a second line to an unselection voltage and discharges the second line to a second selection voltage after the first line is charged to the first selection voltage by the first selection unit, wherein the second selection unit adjusts at least one of a level of the second selection voltage to which the second line to be selected is to be discharged and a time constant when discharging the second line to be selected, in accordance with an operation mode in which the nonvolatile semiconductor storage device operates among the plurality of operation modes.
申请公布号 US8264867(B2) 申请公布日期 2012.09.11
申请号 US20100885881 申请日期 2010.09.20
申请人 KAWAGUCHI KAZUAKI;SASAKI TAKAHIKO;KUROSAWA TOMONORI;KABUSHIKI KAISHA TOSHIBA 发明人 KAWAGUCHI KAZUAKI;SASAKI TAKAHIKO;KUROSAWA TOMONORI
分类号 G11C11/00 主分类号 G11C11/00
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