发明名称 |
Nonvolatile memory device and method for manufacturing same |
摘要 |
According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell is connected to a first interconnection and a second interconnection and includes a plurality of layers. The plurality of layers includes a memory layer and a carbon nanotube-containing layer which is in contact with the memory layer and contains a plurality of carbon nanotubes. |
申请公布号 |
US8264866(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100881658 |
申请日期 |
2010.09.14 |
申请人 |
FUKUMIZU HIROYUKI;NOJIRI YASUHIRO;NAKAI TSUKASA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUMIZU HIROYUKI;NOJIRI YASUHIRO;NAKAI TSUKASA |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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