发明名称 Nonvolatile memory device and method for manufacturing same
摘要 According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell is connected to a first interconnection and a second interconnection and includes a plurality of layers. The plurality of layers includes a memory layer and a carbon nanotube-containing layer which is in contact with the memory layer and contains a plurality of carbon nanotubes.
申请公布号 US8264866(B2) 申请公布日期 2012.09.11
申请号 US20100881658 申请日期 2010.09.14
申请人 FUKUMIZU HIROYUKI;NOJIRI YASUHIRO;NAKAI TSUKASA;KABUSHIKI KAISHA TOSHIBA 发明人 FUKUMIZU HIROYUKI;NOJIRI YASUHIRO;NAKAI TSUKASA
分类号 G11C11/00 主分类号 G11C11/00
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