发明名称 Self-releasing resist material for nano-imprint processes
摘要 Nanoimprint lithography using resist material with the addition of a surfactant is described. A template release layer is formed on a pattern of a template. A non-ionic surfactant is added to a resist material to form a mixed resist material. The resist material may comprise a hydrocarbon material having an unsaturated bond, such as an acrylate material. The surfactant may comprise polyalkylene glycol or an organically modified polysiloxane. A resist layer is then formed on a substrate from the mixed resist material. The surfactant added to the resist material forms a resist release layer on the surface of the resist layer. The template is then pressed into the resist layer, where the template release layer and the resist release layer are between the pattern of the template and the resist layer.
申请公布号 US8262975(B2) 申请公布日期 2012.09.11
申请号 US20080268823 申请日期 2008.11.11
申请人 HGST NETHERLANDS B.V 发明人 BEST MARGARET E.;GUO XING-CAI;KARIS THOMAS E.;KERCHER DAN S.;MATE CHARLES M.;WU TSAI-WEI
分类号 B27N3/08 主分类号 B27N3/08
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