发明名称 Plasma processing apparatus and method
摘要 A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.
申请公布号 US8262848(B2) 申请公布日期 2012.09.11
申请号 US20100951904 申请日期 2010.11.22
申请人 IWASAKI MASAHIDE;UKEI TOMOAKI;TOKYO ELECTRON LIMITED 发明人 IWASAKI MASAHIDE;UKEI TOMOAKI
分类号 H01L21/00;H05H1/16;C23C14/32;C23C16/00;C23C16/509;H01J37/32;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/00
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