发明名称 |
Plasma processing apparatus and method |
摘要 |
A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber. |
申请公布号 |
US8262848(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100951904 |
申请日期 |
2010.11.22 |
申请人 |
IWASAKI MASAHIDE;UKEI TOMOAKI;TOKYO ELECTRON LIMITED |
发明人 |
IWASAKI MASAHIDE;UKEI TOMOAKI |
分类号 |
H01L21/00;H05H1/16;C23C14/32;C23C16/00;C23C16/509;H01J37/32;H01L21/205;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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