发明名称 |
Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth |
摘要 |
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
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申请公布号 |
US8263424(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100792615 |
申请日期 |
2010.06.02 |
申请人 |
HASHIMOTO TADAO;SATO HITOSHI;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
HASHIMOTO TADAO;SATO HITOSHI;NAKAMURA SHUJI |
分类号 |
H01L21/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L33/16 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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