发明名称 |
Compound semiconductor device including AIN layer of controlled skewness |
摘要 |
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive. |
申请公布号 |
US8264005(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100772661 |
申请日期 |
2010.05.03 |
申请人 |
IMANISHI KENJI;KIKKAWA TOSHIHIDE;TANAKA TAKESHI;MORIYA YOSHIHIKO;OTOKI YOHEI;FUJITSU LIMITED |
发明人 |
IMANISHI KENJI;KIKKAWA TOSHIHIDE;TANAKA TAKESHI;MORIYA YOSHIHIKO;OTOKI YOHEI |
分类号 |
H01L29/778;H01L21/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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