发明名称 |
Method of forming patterns of semiconductor device |
摘要 |
A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask. |
申请公布号 |
US8263487(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20090655344 |
申请日期 |
2009.12.29 |
申请人 |
YOON DONG-KI;YI SHI-YONG;CHOI SEONG-WOON;OH SEOK-HWAN;YOON KWANG-SUB;KIM MYEONG-CHEOL;PARK YOUNG-JU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON DONG-KI;YI SHI-YONG;CHOI SEONG-WOON;OH SEOK-HWAN;YOON KWANG-SUB;KIM MYEONG-CHEOL;PARK YOUNG-JU |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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地址 |
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