发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases. |
申请公布号 |
US8263443(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100901055 |
申请日期 |
2010.10.08 |
申请人 |
YOSHINO HIDEO;HASEGAWA HISASHI;SEIKO INSTRUMENTS INC. |
发明人 |
YOSHINO HIDEO;HASEGAWA HISASHI |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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