| 摘要 |
A static random access memory includes: a memory cell connected with a pair of bit lines and supplied with a power supply voltage from a first power supply; a precharge circuit configured to precharge the pair of bit lines with a precharge voltage; and a voltage reducing circuit including: a control circuit comprising a differential amplifier circuit configured to amplify a difference input of a reference voltage generated through resistance division of the power supply voltage and the precharge voltage supplied to a node to output a control signal; and a voltage reduction control transistor connected between the node and the first power supply and configured to generate the precharge voltage in response to the control signal. The precharge circuit includes: precharge transistors configured to control supply of the precharge voltage to the bit lines in response to a first precharge control signal. |
