发明名称 Memory device and semiconductor device
摘要 A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
申请公布号 US8264889(B2) 申请公布日期 2012.09.11
申请号 US20090649377 申请日期 2009.12.30
申请人 OHSAWA NOBUHARU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHSAWA NOBUHARU
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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